Infineon IPD Type N-Channel MOSFET, 31 A, 650 V Enhancement TO-252

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 reel of 2500 units)*

$2,412.50

(exc. GST)

$2,655.00

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 08 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2500 - 2500$0.965$2,412.50
5000 - 5000$0.869$2,172.50
7500 +$0.782$1,955.00

*price indicative

RS Stock No.:
258-3853
Mfr. Part No.:
IPD60R280PFD7SAUMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

650V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

210mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The CoolMOS PFD7 super junction MOSFET in a TO 252 DPAK package features RDS(on) of 280mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and industry-leading SMD package reduce PCB space and in turn the bill-of-material the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS PFD7 offers improved light- and full-load efficiency over CoolMOS P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Excellent commutation ruggedness

Low EMI

Broad package portfolio

BOM cost reduction and easy manufacturing

Robustness and reliability

Easy to select the right parts for design fine-tuning

Related links