Infineon IPD Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252 IPD60N10S412ATMA1

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$3.80

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$4.18

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8$1.90$3.80
10 - 98$1.69$3.38
100 - 248$1.36$2.72
250 - 498$1.35$2.70
500 +$1.13$2.26

*price indicative

Packaging Options:
RS Stock No.:
258-3849
Mfr. Part No.:
IPD60N10S412ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

100V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

94W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

26nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is P-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

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