Infineon IPD Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252 IPD60N10S412ATMA1

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Subtotal (1 pack of 2 units)*

$4.05

(exc. GST)

$4.456

(inc. GST)

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  • 2,302 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8$2.025$4.05
10 - 98$1.80$3.60
100 - 248$1.45$2.90
250 - 498$1.44$2.88
500 +$1.205$2.41

*price indicative

Packaging Options:
RS Stock No.:
258-3849
Mfr. Part No.:
IPD60N10S412ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

100V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

26nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

94W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is P-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

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