Infineon IPD Type N-Channel MOSFET, 67 A, 100 V P, 3-Pin TO-252 IPD12CN10NGATMA1

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Subtotal (1 pack of 2 units)*

$6.38

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$7.02

(inc. GST)

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  • 2,472 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8$3.19$6.38
10 - 98$2.92$5.84
100 - 248$2.47$4.94
250 - 498$2.165$4.33
500 +$1.805$3.61

*price indicative

Packaging Options:
RS Stock No.:
258-3835
Mfr. Part No.:
IPD12CN10NGATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

67A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.4mΩ

Channel Mode

P

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

125W

Typical Gate Charge Qg @ Vgs

49nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM

Excellent switching performance

World’s lowest R DS(on)

Environmentally friendly

Increased efficiency

Highest power density

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