Infineon IPD Type N-Channel MOSFET, 67 A, 100 V P, 3-Pin TO-252 IPD12CN10NGATMA1

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Subtotal (1 pack of 2 units)*

$6.08

(exc. GST)

$6.68

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8$3.04$6.08
10 - 98$2.785$5.57
100 - 248$2.355$4.71
250 - 498$2.065$4.13
500 +$1.72$3.44

*price indicative

Packaging Options:
RS Stock No.:
258-3835
Mfr. Part No.:
IPD12CN10NGATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

67A

Maximum Drain Source Voltage Vds

100V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.4mΩ

Channel Mode

P

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

125W

Typical Gate Charge Qg @ Vgs

49nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM

Excellent switching performance

World’s lowest R DS(on)

Environmentally friendly

Increased efficiency

Highest power density

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