Infineon IPD Type N-Channel MOSFET, 59 A, 100 V N, 3-Pin TO-252 IPD122N10N3GATMA1

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Subtotal (1 pack of 2 units)*

$5.39

(exc. GST)

$5.928

(inc. GST)

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  • 1,308 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8$2.695$5.39
10 - 98$2.415$4.83
100 - 248$1.895$3.79
250 - 498$1.56$3.12
500 +$1.23$2.46

*price indicative

Packaging Options:
RS Stock No.:
258-3833
Mfr. Part No.:
IPD122N10N3GATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

100V

Series

IPD

Package Type

TO-252

Pin Count

3

Maximum Drain Source Resistance Rds

12.2mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

94W

Typical Gate Charge Qg @ Vgs

26nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, IEC 61249-2-21

Automotive Standard

No

The Infineon OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM.

Excellent switching performance

Less paralleling required

Smallest board-space consumption

Easy-to-design products

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