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Infineon HEXFET Type N-Channel MOSFET, -7.4 A, -12 V, 8-Pin SO-8

RS Stock No.:: 257-9307
Mfr. Part No.:: IRF7329TRPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, -7.4 A, -12 V, 8-Pin SO-8

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Currently unavailable

We don't know if this item will be back in stock, RS intend to remove it from our range soon.

RS Stock No.:: 257-9307
Mfr. Part No.:: IRF7329TRPBF
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	-7.4A
	Maximum Drain Source Voltage Vds	-12V
	Package Type	SO-8
	Series	HEXFET
	Pin Count	8
	Maximum Drain Source Resistance Rds	199mΩ
	Maximum Power Dissipation Pd	2W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±8 V
	Typical Gate Charge Qg @ Vgs	8.1nC
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Width	4 mm
	Length	5mm
	Standards/Approvals	RoHS Compliant
	Height	1.75mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id -7.4A
	Maximum Drain Source Voltage Vds -12V
	Package Type SO-8
	Series HEXFET
	Pin Count 8
	Maximum Drain Source Resistance Rds 199mΩ
	Maximum Power Dissipation Pd 2W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±8 V
	Typical Gate Charge Qg @ Vgs 8.1nC
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Width 4 mm
	Length 5mm
	Standards/Approvals RoHS Compliant
	Height 1.75mm
	Automotive Standard No

Datasheet - IRF7329TRPBF

The Infineon IRF series is the -12V dual p channel HEXFET power mosfet in a SO 8 package.

RoHS Compliant

Low RDS (on)

Dual p channel mosfet

Infineon HEXFET Type N-Channel MOSFET, -7.4 A, -12 V, 8-Pin SO-8

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