Infineon HEXFET Type N-Channel MOSFET, 76 A, 200 V TO-220 IRFB4127PBF

N

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Subtotal (1 pack of 2 units)*

$9.69

(exc. GST)

$10.66

(inc. GST)

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In Stock
  • 950 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8$4.845$9.69
10 - 18$4.35$8.70
20 - 48$4.26$8.52
50 - 98$4.175$8.35
100 +$3.57$7.14

*price indicative

Packaging Options:
RS Stock No.:
257-5807
Mfr. Part No.:
IRFB4127PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

76A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-220

Series

HEXFET

Mount Type

PCB

Maximum Drain Source Resistance Rds

20mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Industry standard through-hole power package

High-current rating

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100 kHz

Softer body-diode compared to previous silicon generation

Wide portfolio available


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