Vishay Type N-Channel MOSFET, 430 A, 80 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ184E-T1_GE3

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Subtotal (1 pack of 2 units)*

$12.43

(exc. GST)

$13.672

(inc. GST)

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Per Pack*
2 - 48$6.215$12.43
50 - 98$5.285$10.57
100 - 248$4.565$9.13
250 - 998$4.48$8.96
1000 +$3.325$6.65

*price indicative

Packaging Options:
RS Stock No.:
252-0312
Mfr. Part No.:
SQJQ184E-T1_GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

430A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK (8x8LR)

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0014mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

214W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

43nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.15mm

Width

4.9 mm

Automotive Standard

AEC-Q101

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.

TrenchFET power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Thin 1.9 mm height


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