DiodesZetex 2 Type N-Channel MOSFET, 100 V Enhancement, 6-Pin UDFN-2020 DMN10H6D2LFDB-7

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$12.05

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$13.25

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Per Pack*
25 - 25$0.482$12.05
50 - 75$0.47$11.75
100 - 225$0.46$11.50
250 - 975$0.448$11.20
1000 +$0.437$10.93

*price indicative

Packaging Options:
RS Stock No.:
246-7507
Mfr. Part No.:
DMN10H6D2LFDB-7
Brand:
DiodesZetex
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Brand

DiodesZetex

Product Type

MOSFET

Channel Type

Type N

Maximum Drain Source Voltage Vds

100V

Package Type

UDFN-2020

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.2nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

0.7W

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN2020-6 packaging. It offers fast switching and high efficiency. It offers an ESD protected gate (up to 1kV).

Maximum drain to source voltage is 100 V Maximum gate to source voltage is ±20 V It offers a low gate threshold voltage It provides a low input capacitance

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