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Infineon IPD Type N-Channel MOSFET, 180 A, 75 V N, 3-Pin TO-252 IPD65R660CFDAATMA1

RS Stock No.:: 244-8548
Mfr. Part No.:: IPD65R660CFDAATMA1
Brand:: Infineon

Infineon IPD Type N-Channel MOSFET, 180 A, 75 V N, 3-Pin TO-252 IPD65R660CFDAATMA1

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Bulk discount available

Subtotal (1 pack of 2 units)*

$5.76

(exc. GST)

$6.34

(inc. GST)

FREE delivery for orders over $60.00 ex GST

In Stock

2,402 unit(s) ready to ship from another location

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Units	Per unit	Per Pack*
2 - 8	$2.88	$5.76
10 - 98	$2.81	$5.62
100 - 248	$2.74	$5.48
250 - 498	$2.675	$5.35
500 +	$2.61	$5.22

*price indicative

RS Stock No.:: 244-8548
Mfr. Part No.:: IPD65R660CFDAATMA1
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	75V
	Package Type	TO-252
	Series	IPD
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 75V
	Package Type TO-252
	Series IPD
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPD65R660CFDAATMA1

The Infineon CoolMOS MOSFET is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS CFDA series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter, and cooler.

Ultra-fast body diode

Very high commutation ruggedness

Extremely low losses due to very low

Easy to use/drive

Qualified according to AEC Q101

Green package (RoHS compliant)

Infineon IPD Type N-Channel MOSFET, 180 A, 75 V N, 3-Pin TO-252 IPD65R660CFDAATMA1

FREE delivery for orders over $60.00 ex GST

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