Infineon ISS Type P-Channel MOSFET, 0.18 A, 60 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

$222.00

(exc. GST)

$243.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 3000$0.074$222.00
6000 - 6000$0.073$219.00
9000 +$0.071$213.00

*price indicative

RS Stock No.:
244-2277
Mfr. Part No.:
ISS55EP06LMXTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

0.18A

Maximum Drain Source Voltage Vds

60V

Series

ISS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Distrelec Product Id

304-40-557

The Infineon P-Channel Power MOSFET has a design flexibility and ease of handling to meet the highest performance requirements which include the -12V range of products that are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switched, DC-DC converters, and low voltage drive applications.

P-Channel

Low On-resistance RDS(on)

100% Avalanche tested

Logic level or normal level

Enhancement mode

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-21

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