Infineon ISS Type P-Channel MOSFET, 3 A, 60 V Enhancement, 3-Pin SOT-23 ISS17EP06LMXTSA1

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Subtotal (1 pack of 10 units)*

$3.25

(exc. GST)

$3.58

(inc. GST)

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Last RS stock
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Units
Per unit
Per Pack*
10 - 10$0.325$3.25
20 - 90$0.318$3.18
100 - 240$0.311$3.11
250 - 490$0.304$3.04
500 +$0.297$2.97

*price indicative

Packaging Options:
RS Stock No.:
244-2275
Mfr. Part No.:
ISS17EP06LMXTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Series

ISS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon P-Channel Power MOSFET offer design flexibility and ease of handling to meet the highest performance requirements which include the -12V range of products that are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switched, DC-DC converters, and low voltage drive applications.

P-Channel

Low On-resistance RDS(on)

100% Avalanche tested

Logic level or normal level

Enhancement mode

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-21

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