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Infineon IPD Type P-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252

RS Stock No.:: 244-1589
Mfr. Part No.:: IPD25DP06LMATMA1
Brand:: Infineon

Infineon IPD Type P-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.

RS Stock No.:: 244-1589
Mfr. Part No.:: IPD25DP06LMATMA1
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-252
	Series	IPD
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.4mΩ
	Channel Mode	N
	Forward Voltage Vf	1.1V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	81W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-252
	Series IPD
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.4mΩ
	Channel Mode N
	Forward Voltage Vf 1.1V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 81W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPD25DP06LMATMA1

The Infineon MOSFET OptiMOSTM Power Transistor has Pb-free lead plating, RoHS compliant and is halogen-free according to IEC61249-2-21.

P-Channel

Very low on-resistance RDS(on)

100% avalanche tested

Normal Level

Enhancement mode

Infineon IPD Type P-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252

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