Vishay Type N-Channel MOSFET, 410 A, 30 V Depletion, 4-Pin PowerPAK SO-8L SQJ186EP-T1_GE3

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Subtotal (1 pack of 10 units)*

$14.57

(exc. GST)

$16.03

(inc. GST)

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Last RS stock
  • Final 2,010 unit(s), ready to ship from another location

Units
Per unit
Per Pack*
10 - 40$1.457$14.57
50 - 90$1.431$14.31
100 - 240$1.406$14.06
250 - 990$1.381$13.81
1000 +$1.357$13.57

*price indicative

Packaging Options:
RS Stock No.:
239-8671
Mfr. Part No.:
SQJ186EP-T1_GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

410A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK SO-8L

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.02Ω

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

43nC

Maximum Power Dissipation Pd

255W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

125°C

Standards/Approvals

No

Length

6.15mm

Automotive Standard

AEC-Q101

The Vishay SIDR is automotive N-Channel MOSFET which operates at 80 V and 175 °C temperature. This MOSFET used for high power density.

AEC-Q101 qualified

UIS tested

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