STMicroelectronics SCTW70N Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 3-Pin Hip-247

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Subtotal (1 tube of 30 units)*

$1,981.38

(exc. GST)

$2,179.53

(inc. GST)

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Units
Per unit
Per Tube*
30 - 30$66.046$1,981.38
60 - 60$62.743$1,882.29
90 +$59.606$1,788.18

*price indicative

RS Stock No.:
233-3023
Mfr. Part No.:
SCTW70N120G2V
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

91A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Series

SCTW70N

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

21mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

28nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

2.7V

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

547W

Maximum Operating Temperature

200°C

Width

5.15 mm

Length

15.75mm

Standards/Approvals

No

Height

20.15mm

Automotive Standard

No

The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the Sic material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Very high operating junction temperature capability (TJ = 200 °C)

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitances

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