Infineon OptiMOS 5 Type N-Channel MOSFET, 59 A, 100 V, 8-Pin SO-8
- RS Stock No.:
- 232-6761
- Mfr. Part No.:
- ISC0804NLSATMA1
- Brand:
- Infineon
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- RS Stock No.:
- 232-6761
- Mfr. Part No.:
- ISC0804NLSATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14.9mΩ | |
| Maximum Power Dissipation Pd | 60W | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.35mm | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14.9mΩ | ||
Maximum Power Dissipation Pd 60W | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 5.35mm | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
Related links
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