Specifications

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Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	110A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PQFN
	Series	NTMFS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	7.6mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	187W
	Forward Voltage Vf	0.84V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	92nC
	Maximum Operating Temperature	175°C
	Length	5mm
	Standards/Approvals	No
	Height	6mm
	Width	1.1 mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 110A
	Maximum Drain Source Voltage Vds 100V
	Package Type PQFN
	Series NTMFS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 7.6mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 187W
	Forward Voltage Vf 0.84V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 92nC
	Maximum Operating Temperature 175°C
	Length 5mm
	Standards/Approvals No
	Height 6mm
	Width 1.1 mm
	Automotive Standard No

Datasheet - NTMFS7D8N10GTWG

The ON Semiconductor N-channel MOSFET is produced using advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Minimize conduction losses

High peak UIS current capability for ruggedness

Halogen-free

Pb-free

onsemi NTMFS Type N-Channel MOSFET, 110 A, 100 V N, 8-Pin PQFN

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