onsemi SUPERFET III Type N-Channel MOSFET, 10 A, 650 V N, 3-Pin TO-252

RS Stock No.:: 229-6452
Mfr. Part No.:: NTD360N65S3H
Brand:: onsemi

onsemi SUPERFET III Type N-Channel MOSFET, 10 A, 650 V N, 3-Pin TO-252

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 2500 units)*

$4,600.00

(exc. GST)

$5,050.00

(inc. GST)

FREE delivery for orders over $60.00 ex GST

In Stock

Plus 12,500 unit(s) shipping from 30 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
2500 - 5000	$1.84	$4,600.00
7500 - 10000	$1.785	$4,462.50
12500 +	$1.731	$4,327.50

*price indicative

RS Stock No.:: 229-6452
Mfr. Part No.:: NTD360N65S3H
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-252
	Series	SUPERFET III
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	17.5nC
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	83W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	6.73mm
	Height	6.22mm
	Width	2.39 mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-252
	Series SUPERFET III
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 17.5nC
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 83W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 6.73mm
	Height 6.22mm
	Width 2.39 mm
	Automotive Standard No

Datasheet - NTD360N65S3H

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency.

Features

• 700 V @ TJ = 150°C

• Ultra Low Gate Charge (Typ. Qg = 17.5 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF)

• Fast switching performance with robust body diode

• 100% Avalanche Tested

• RoHS Compliant

• Typ. RDS(on) = 296 m

• Internal Gate Resistance: 0.9

onsemi SUPERFET III Type N-Channel MOSFET, 10 A, 650 V N, 3-Pin TO-252

FREE delivery for orders over $60.00 ex GST

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK

Features

Related links