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Vishay TrenchFET Type P-Channel MOSFET, 33.6 A, 100 V Enhancement, 4-Pin SO-8

RS Stock No.:: 228-2958
Mfr. Part No.:: SQJ211ELP-T1_GE3
Brand:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 33.6 A, 100 V Enhancement, 4-Pin SO-8

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RS Stock No.:: 228-2958
Mfr. Part No.:: SQJ211ELP-T1_GE3
Brand:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	33.6A
	Maximum Drain Source Voltage Vds	100V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	30mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	68W
	Forward Voltage Vf	-0.82V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	45nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 33.6A
	Maximum Drain Source Voltage Vds 100V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 30mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 68W
	Forward Voltage Vf -0.82V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 45nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - SQJ211ELP-T1_GE3

The Vishay TrenchFET automotive P-channel is 100 V power MOSFET.

100 % Rg and UIS tested

Vishay TrenchFET Type P-Channel MOSFET, 33.6 A, 100 V Enhancement, 4-Pin SO-8

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