N-Channel MOSFET, 13 A, 1200 V, 4-Pin TO-247-4 Infineon IMZ120R220M1HXKSA1
- RS Stock No.:
- 222-4870
- Mfr. Part No.:
- IMZ120R220M1HXKSA1
- Brand:
- Infineon
220 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Tube of 30)
$11.116
(exc. GST)
$12.228
(inc. GST)
Units | Per unit | Per Tube* |
---|---|---|
30 - 120 | $11.116 | $333.48 |
150 + | $10.004 | $300.12 |
*price indicative
- RS Stock No.:
- 222-4870
- Mfr. Part No.:
- IMZ120R220M1HXKSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon CoolSiC™ MOSFET 1200 V, 220 mΩ in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.
Best in class switching and conduction losses
Benchmark high threshold voltage, Vth > 4 V
0V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn-off switching losses
Driver source pin for optimized switching performance
Benchmark high threshold voltage, Vth > 4 V
0V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn-off switching losses
Driver source pin for optimized switching performance
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 13 A |
Maximum Drain Source Voltage | 1200 V |
Series | IMZ1 |
Package Type | TO-247-4 |
Mounting Type | Through Hole |
Pin Count | 4 |
Maximum Drain Source Resistance | 220 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4.5V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
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