Infineon IMZ1 Type N-Channel MOSFET, 26 A, 1200 V Enhancement, 4-Pin TO-247

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Subtotal (1 tube of 30 units)*

$274.59

(exc. GST)

$302.04

(inc. GST)

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  • 570 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
30 - 60$9.153$274.59
90 - 120$8.907$267.21
150 +$8.724$261.72

*price indicative

RS Stock No.:
222-4866
Mfr. Part No.:
IMZ120R090M1HXKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Series

IMZ1

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolSiC 1200 V, 90 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.

Best in class switching and conduction losses

Benchmark high threshold voltage, Vth > 4 V

0V turn-off gate voltage for easy and simple gate drive

Wide gate-source voltage range

Robust and low loss body diode rated for hard commutation

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