Infineon CoolMOS Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R600P7SAKMA1

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 20 units)*

$21.96

(exc. GST)

$24.16

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 06 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
20 - 20$1.098$21.96
40 - 80$1.078$21.56
100 - 220$1.058$21.16
240 - 480$1.038$20.76
500 +$1.02$20.40

*price indicative

Packaging Options:
RS Stock No.:
222-4713
Mfr. Part No.:
IPSA70R600P7SAKMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.5A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-251

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

43.1W

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

10.5nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Width

2.38 mm

Length

6.6mm

Height

6.1mm

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Product validation acc. JEDEC Standard

Low switching losses (Eoss)

Integrated ESD protection diode

Excellent thermal behaviour

Related links