Silicon N-Channel MOSFET, 12 A, 650 V, 3-Pin DPAK Infineon IPD60R280P7ATMA1

RS Stock No.:: 222-4673
Mfr. Part No.:: IPD60R280P7ATMA1
Brand:: Infineon

Silicon N-Channel MOSFET, 12 A, 650 V, 3-Pin DPAK Infineon IPD60R280P7ATMA1

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Added

Price (ex. GST) Each (In a Pack of 10)

$2.299

(exc. GST)

$2.529

(inc. GST)

Units	Per unit	Per Pack*
10 - 10	$2.299	$22.99
20 - 90	$2.23	$22.30
100 - 240	$2.164	$21.64
250 - 490	$2.099	$20.99
500 +	$2.037	$20.37
*price indicative

RS Stock No.:: 222-4673
Mfr. Part No.:: IPD60R280P7ATMA1
Brand:: Infineon

Technical data sheets

Datasheet - IPD60R280P7ATMA1

Legislation and Compliance

Product Details

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	12 A
Maximum Drain Source Voltage	650 V
Package Type	TO-252
Series	CoolMOS
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	0.28 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Number of Elements per Chip	1
Transistor Material	Silicon

Silicon N-Channel MOSFET, 12 A, 650 V, 3-Pin DPAK Infineon IPD60R280P7ATMA1

Technical data sheets

Legislation and Compliance

Product Details

Specifications

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