DiodesZetex Dual DMT Type N-Channel MOSFET, 10.6 A, 30 V Enhancement, 8-Pin VDFN-3030 DMT3009UDT-7
- RS Stock No.:
- 222-2868
- Mfr. Part No.:
- DMT3009UDT-7
- Brand:
- DiodesZetex
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 222-2868
- Mfr. Part No.:
- DMT3009UDT-7
- Brand:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | VDFN-3030 | |
| Series | DMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.011Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 16W | |
| Typical Gate Charge Qg @ Vgs | 14.6nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type VDFN-3030 | ||
Series DMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.011Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 16W | ||
Typical Gate Charge Qg @ Vgs 14.6nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200 | ||
The DiodesZetex Dual n-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Ultra Low Gate Threshold Voltage
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Related links
- DiodesZetex Dual DMT Type N-Channel MOSFET 30 V Enhancement, 8-Pin VDFN-3030
- DiodesZetex Dual DMT Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerDI3333-8
- DiodesZetex Dual DMT Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerDI3333-8
- DiodesZetex Dual DMT Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerDI3333-8 DMT4014LDV-7
- DiodesZetex Dual DMT Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerDI3333-8 DMT4015LDV-7
- DiodesZetex Dual DMT Type N-Channel MOSFET 30 V Enhancement, 6-Pin UDFN-2020
- DiodesZetex Dual DMT Type N-Channel MOSFET 30 V Enhancement, 6-Pin UDFN-2020 DMT3020LFDBQ-7
- DiodesZetex Dual DMT 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC