Infineon CoolMOS P7 Type N-Channel MOSFET, 206 A, 650 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 30 units)*

$209.04

(exc. GST)

$229.95

(inc. GST)

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  • 330 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
30 - 60$6.968$209.04
90 - 120$6.78$203.40
150 +$6.64$199.20

*price indicative

RS Stock No.:
219-6022
Mfr. Part No.:
IPW60R045P7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

206A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

90nC

Maximum Power Dissipation Pd

201W

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

16.13mm

Height

5.21mm

Width

21.1 mm

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor RG

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

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