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STMicroelectronics STL260N Type N-Channel MOSFET, 120 A, 40 V, 8-Pin PowerFLAT STL260N4LF7

RS Stock No.:: 219-4230
Mfr. Part No.:: STL260N4LF7
Brand:: STMicroelectronics

STMicroelectronics STL260N Type N-Channel MOSFET, 120 A, 40 V, 8-Pin PowerFLAT STL260N4LF7

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 5 units)*

$24.79

(exc. GST)

$27.27

(inc. GST)

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Units	Per unit	Per Pack*
5 - 45	$4.958	$24.79
50 - 95	$4.866	$24.33
100 - 245	$4.774	$23.87
250 - 995	$4.686	$23.43
1000 +	$4.60	$23.00

*price indicative

RS Stock No.:: 219-4230
Mfr. Part No.:: STL260N4LF7
Brand:: STMicroelectronics

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	40V
	Package Type	PowerFLAT
	Series	STL260N
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	110mΩ
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	188W
	Typical Gate Charge Qg @ Vgs	42nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Length	6mm
	Height	1mm
	Width	5 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 40V
	Package Type PowerFLAT
	Series STL260N
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 110mΩ
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 188W
	Typical Gate Charge Qg @ Vgs 42nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Length 6mm
	Height 1mm
	Width 5 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - STL260N4LF7

The STMicroelectronics N-channel power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Among the lowest RDS(on) on the market

Excellent FoM (figure of merit)

Low Crss/Ciss ratio for EMI immunity

High avalanche ruggedness

STMicroelectronics STL260N Type N-Channel MOSFET, 120 A, 40 V, 8-Pin PowerFLAT STL260N4LF7

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