N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IRFR540ZTRPBF

RS Stock No.:: 215-2598
Mfr. Part No.:: IRFR540ZTRPBF
Brand:: Infineon

N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IRFR540ZTRPBF

44000 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (On a Reel of 2000)

$0.95

(exc. GST)

$1.05

(inc. GST)

Units	Per unit	Per Reel*
2000 - 8000	$0.95	$1,900.00
10000 +	$0.855	$1,710.00
*price indicative

RS Stock No.:: 215-2598
Mfr. Part No.:: IRFR540ZTRPBF
Brand:: Infineon

Technical data sheets

Datasheet - IRFR540ZTRPBF

Legislation and Compliance

Product Details

This Infineon HEXFET® Power MOSFET utilizes the latest 35A ID processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology
Ultra Low On-Resistance
Lead-Free and Halogen-Free

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	35 A
Maximum Drain Source Voltage	100 V
Package Type	DPAK (TO-252)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	0.0285 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Number of Elements per Chip	1
Transistor Material	Si

N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IRFR540ZTRPBF

Technical data sheets

Legislation and Compliance

Product Details

Specifications

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