Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor, 16 A, 100 V Enhancement, 8-Pin TDSON
- RS Stock No.:
- 214-9057
- Mfr. Part No.:
- IPG16N10S461AATMA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 5000 units)*
$3,465.00
(exc. GST)
$3,810.00
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- Plus 5,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 20000 | $0.693 | $3,465.00 |
| 25000 + | $0.624 | $3,120.00 |
*price indicative
- RS Stock No.:
- 214-9057
- Mfr. Part No.:
- IPG16N10S461AATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TDSON | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 61mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 29W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 5.4nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.9 mm | |
| Standards/Approvals | RoHS | |
| Length | 5.15mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TDSON | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 61mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 29W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 5.4nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Width 5.9 mm | ||
Standards/Approvals RoHS | ||
Length 5.15mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. The Dual N-channel Normal Level - Enhancement mode, are feasible for automatic optical inspection (AOI). OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.
The product is AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature
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