Infineon HEXFET Type N-Channel MOSFET, 105 A, 150 V Enhancement, 7-Pin TO-263

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Subtotal (1 reel of 800 units)*

$3,784.80

(exc. GST)

$4,163.20

(inc. GST)

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Units
Per unit
Per Reel*
800 - 3200$4.731$3,784.80
4000 +$4.575$3,660.00

*price indicative

RS Stock No.:
214-8958
Mfr. Part No.:
AUIRFS4115-7TRL
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

105A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

11.8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

380W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

73nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

4.83mm

Length

10.54mm

Width

9.65 mm

Automotive Standard

AEC-Q101

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced Process Technology

Ultra Low On-Resistance

Automotive Qualified

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