Infineon HEXFET Type N-Channel MOSFET, 56 A, 100 V, 3-Pin TO-252 IRFR3710ZTRLPBF
- RS Stock No.:
- 214-4457
- Mfr. Part No.:
- IRFR3710ZTRLPBF
- Brand:
- Infineon
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Subtotal (1 pack of 15 units)*
$35.865
(exc. GST)
$39.45
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- Plus 2,220 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 735 | $2.391 | $35.87 |
| 750 - 1485 | $2.332 | $34.98 |
| 1500 + | $2.295 | $34.43 |
*price indicative
- RS Stock No.:
- 214-4457
- Mfr. Part No.:
- IRFR3710ZTRLPBF
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
Its design is extremely efficient and reliable
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