Infineon HEXFET Type N-Channel MOSFET, 56 A, 100 V TO-252 IRFR3710ZTRPBF

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$16.91

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$18.60

(inc. GST)

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Units
Per unit
Per Pack*
5 - 45$3.382$16.91
50 - 95$3.062$15.31
100 - 245$2.448$12.24
250 - 995$2.396$11.98
1000 +$1.666$8.33

*price indicative

Packaging Options:
RS Stock No.:
257-5855
Mfr. Part No.:
IRFR3710ZTRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

18mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

140W

Typical Gate Charge Qg @ Vgs

69nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Width

2.39 mm

Length

6.73mm

Height

10.41mm

Distrelec Product Id

304-40-539

Automotive Standard

No

The Infineon HEXFET power MOSFET is utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced process technology

Ultra low on-resistance

175°C operating temperature

Fast switching

Repetitive avalanche allowed up to Tjmax

Multiple package options

Lead-free

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