Infineon OptiMOS -T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB120N08S403ATMA1

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Subtotal (1 pack of 5 units)*

$48.02

(exc. GST)

$52.82

(inc. GST)

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Last RS stock
  • Final 220 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 245$9.604$48.02
250 - 495$9.36$46.80
500 +$9.218$46.09

*price indicative

Packaging Options:
RS Stock No.:
214-4366
Mfr. Part No.:
IPB120N08S403ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-263

Series

OptiMOS -T2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

278W

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

128nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

10.02mm

Height

4.5mm

Width

9.27 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

This Infineon OptiMOS T2 MOSFET is 100% Avalanche tested and is RoHS compliant.

It is AEC Q101 qualified

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