Dual N/P-Channel-Channel MOSFET, 1.4 A, 1.5 A, 30 V, 6-Pin TSOP-6 Infineon BSL316CH6327XTSA1

RS Stock No.:: 166-1082
Mfr. Part No.:: BSL316CH6327XTSA1
Brand:: Infineon

Dual N/P-Channel-Channel MOSFET, 1.4 A, 1.5 A, 30 V, 6-Pin TSOP-6 Infineon BSL316CH6327XTSA1

This image is representative of the product range

31500 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 3000)

$0.294

(exc. GST)

$0.323

(inc. GST)

Units	Per unit	Per Reel*
3000 - 12000	$0.294	$882.00
15000 +	$0.265	$795.00

*price indicative

RS Stock No.:: 166-1082
Mfr. Part No.:: BSL316CH6327XTSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: MY

Product Details

Infineon OptiMOS™ Dual Power MOSFET

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	1.4 A, 1.5 A
Maximum Drain Source Voltage	30 V
Package Type	TSOP-6
Series	OptiMOS™
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	270 mΩ, 280 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	500 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	0.6 nC @ 5 V, 2.4 nC @ 5 V
Transistor Material	Si
Number of Elements per Chip	2
Length	2.9mm
Width	1.6mm
Height	1mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.1V