N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STMicroelectronics STO67N60DM6
- RS Stock No.:
- 206-6067
- Mfr. Part No.:
- STO67N60DM6
- Brand:
- STMicroelectronics
Available for back order.
Price (ex. GST) Each (On a Reel of 1800)
$7.786
(exc. GST)
$8.565
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 1800 - 7200 | $7.786 | $14,014.80 |
| 9000 + | $7.007 | $12,612.60 |
*price indicative
- RS Stock No.:
- 206-6067
- Mfr. Part No.:
- STO67N60DM6
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Excellent switching performance thanks to the extra driving source pin
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Excellent switching performance thanks to the extra driving source pin
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 33 A |
| Maximum Drain Source Voltage | 600 V |
| Series | STO67N60DM6 |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 59 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 25V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
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