N-Channel MOSFET Transistor & Diode, 19.5 A, 1200 V, 7-Pin D2PAK onsemi NTBG160N120SC1

RS Stock No.:: 205-2494
Mfr. Part No.:: NTBG160N120SC1
Brand:: onsemi

N-Channel MOSFET Transistor & Diode, 19.5 A, 1200 V, 7-Pin D2PAK onsemi NTBG160N120SC1

Available for back order.

Price (ex. GST) Each (In a Pack of 5)

$14.822

(exc. GST)

$16.304

(inc. GST)

Units	Per unit	Per Pack*
5 - 195	$14.822	$74.11
200 - 395	$14.45	$72.25
400 +	$14.228	$71.14

*price indicative

RS Stock No.:: 205-2494
Mfr. Part No.:: NTBG160N120SC1
Brand:: onsemi

Technical data sheets

Datasheet - NTBG160N120SC1

Legislation and Compliance

Product Details

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L

The ON Semiconductor SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Continuous Drain Current rating is 19.5A
Drain to source on resistance rating is 224mohm
Ultra Low Gate Charge
High Speed Switching and Low Capacitance
100% Avalanche Tested

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	19.5 A
Maximum Drain Source Voltage	1200 V
Package Type	D2PAK (TO-263)
Series	NTB
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	225 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.3V
Number of Elements per Chip	1
Transistor Material	Si