SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCTWA10N120

The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Easy to drive
Low capacitance
Very fast and robust intrinsic body diode
Slight variation of switching losses vs. temperature
Very high operating temperature capability (200 °C)
Very tight variation of on-resistance vs. temperature

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