onsemi Dual N NTTF 1 Type N-Channel MOSFET, 38 A, 60 V Enhancement, 12-Pin WQFN
- RS Stock No.:
- 202-5719
- Mfr. Part No.:
- NTTFD9D0N06HLTWG
- Brand:
- onsemi
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Subtotal (1 reel of 3000 units)*
$4,641.00
(exc. GST)
$5,106.00
(inc. GST)
FREE delivery for orders over $60.00 ex GST
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- Shipping from 29 June 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | $1.547 | $4,641.00 |
| 6000 - 9000 | $1.508 | $4,524.00 |
| 12000 + | $1.485 | $4,455.00 |
*price indicative
- RS Stock No.:
- 202-5719
- Mfr. Part No.:
- NTTFD9D0N06HLTWG
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | WQFN | |
| Series | NTTF | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 9Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.79V | |
| Typical Gate Charge Qg @ Vgs | 13.5nC | |
| Maximum Power Dissipation Pd | 26W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual N | |
| Height | 0.75mm | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Width | 3.3 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type WQFN | ||
Series NTTF | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 9Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.79V | ||
Typical Gate Charge Qg @ Vgs 13.5nC | ||
Maximum Power Dissipation Pd 26W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual N | ||
Height 0.75mm | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Width 3.3 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The ON Semiconductor Symmetrical Dual N-Channel MOSFET includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. It is used in Computing, Communications, General purpose point of load applications.
Low inductance packaging
Lower switching losses
RoHS compliant
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