onsemi NVMYS011N04C Type N-Channel MOSFET, 35 A, 40 V Enhancement, 4-Pin LFPAK
- RS Stock No.:
- 195-2547
- Mfr. Part No.:
- NVMYS011N04CTWG
- Brand:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
$1,716.00
(exc. GST)
$1,887.00
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Last RS stock
- Final 6,000 unit(s), ready to ship from another location
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | $0.572 | $1,716.00 |
| 6000 - 9000 | $0.558 | $1,674.00 |
| 12000 + | $0.545 | $1,635.00 |
*price indicative
- RS Stock No.:
- 195-2547
- Mfr. Part No.:
- NVMYS011N04CTWG
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NVMYS011N04C | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 7.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 28W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.15mm | |
| Length | 5mm | |
| Width | 4.25 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NVMYS011N04C | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 7.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 28W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 1.15mm | ||
Length 5mm | ||
Width 4.25 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
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