onsemi NVMYS7D3N04CL Type N-Channel MOSFET, 52 A, 40 V Enhancement, 4-Pin LFPAK
- RS Stock No.:
- 195-2536
- Mfr. Part No.:
- NVMYS7D3N04CLTWG
- Brand:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
$1,896.00
(exc. GST)
$2,085.00
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- Plus 3,000 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | $0.632 | $1,896.00 |
| 6000 - 9000 | $0.616 | $1,848.00 |
| 12000 + | $0.607 | $1,821.00 |
*price indicative
- RS Stock No.:
- 195-2536
- Mfr. Part No.:
- NVMYS7D3N04CLTWG
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NVMYS7D3N04CL | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Power Dissipation Pd | 38W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.15mm | |
| Width | 4.25 mm | |
| Length | 5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NVMYS7D3N04CL | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Power Dissipation Pd 38W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.15mm | ||
Width 4.25 mm | ||
Length 5mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
Related links
- onsemi NVMYS7D3N04CL Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK NVMYS7D3N04CLTWG
- onsemi NTMYS7D3N04CL Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK
- onsemi NTMYS7D3N04CL Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK NTMYS7D3N04CLTWG
- onsemi NVMYS1D3N04C Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK
- onsemi NTMYS025N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS3D3N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS021N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NTMYS021N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
