N-Channel MOSFET, 24 A, 650 V, 3-Pin D2PAK onsemi NVB150N65S3F
- RS Stock No.:
- 195-2518
- Mfr. Part No.:
- NVB150N65S3F
- Brand:
- onsemi
580 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Pack of 10)
$5.471
(exc. GST)
$6.018
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 190 | $5.471 | $54.71 |
| 200 - 390 | $5.334 | $53.34 |
| 400 + | $5.251 | $52.51 |
*price indicative
- RS Stock No.:
- 195-2518
- Mfr. Part No.:
- NVB150N65S3F
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
701 V @ TJ = 150°C
Typ. RDS(on) = 114 m
Ultra Low Gate Charge (Typ. Qg = 43 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 385 pF)
These Devices are Pb−Free
Applications
Automotive On Board Charger
Automotive DC/DC Converter for HEV
Typ. RDS(on) = 114 m
Ultra Low Gate Charge (Typ. Qg = 43 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 385 pF)
These Devices are Pb−Free
Applications
Automotive On Board Charger
Automotive DC/DC Converter for HEV
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 24 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 150 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 192 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 10.67mm |
| Width | 9.65mm |
| Typical Gate Charge @ Vgs | 43 nC @ 10 V |
| Forward Diode Voltage | 1.3V |
| Automotive Standard | AEC-Q101 |
| Minimum Operating Temperature | -55 °C |
| Height | 4.58mm |
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