onsemi NTHL Type N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 195-2500
- Mfr. Part No.:
- NTHL040N65S3HF
- Brand:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
$544.53
(exc. GST)
$598.98
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Last RS stock
- Final 870 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | $18.151 | $544.53 |
| 60 - 90 | $17.697 | $530.91 |
| 120 + | $17.424 | $522.72 |
*price indicative
- RS Stock No.:
- 195-2500
- Mfr. Part No.:
- NTHL040N65S3HF
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTHL | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 159nC | |
| Maximum Power Dissipation Pd | 446W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 20.82mm | |
| Width | 4.82 mm | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTHL | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 159nC | ||
Maximum Power Dissipation Pd 446W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 20.82mm | ||
Width 4.82 mm | ||
Length 15.87mm | ||
Automotive Standard No | ||
SUPERFET III MOSFET is ON Semiconductors brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFETs optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
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