Wolfspeed Half Bridge Type N-Channel MOSFET, 450 A, 1.2 kV CAB450M12XM3
- RS Stock No.:
- 192-3386
- Mfr. Part No.:
- CAB450M12XM3
- Brand:
- Wolfspeed
Bulk discount available
Subtotal (1 unit)*
$1,765.89
(exc. GST)
$1,942.48
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 1 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 1 | $1,765.89 |
| 2 - 9 | $1,721.74 |
| 10 + | $1,678.70 |
*price indicative
- RS Stock No.:
- 192-3386
- Mfr. Part No.:
- CAB450M12XM3
- Brand:
- Wolfspeed
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 450A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Maximum Gate Source Voltage Vgs | 19 V | |
| Typical Gate Charge Qg @ Vgs | 1330nC | |
| Forward Voltage Vf | 4.7V | |
| Maximum Power Dissipation Pd | 50mW | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Half Bridge | |
| Height | 15.75mm | |
| Length | 80mm | |
| Width | 53 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 450A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Maximum Gate Source Voltage Vgs 19 V | ||
Typical Gate Charge Qg @ Vgs 1330nC | ||
Forward Voltage Vf 4.7V | ||
Maximum Power Dissipation Pd 50mW | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Half Bridge | ||
Height 15.75mm | ||
Length 80mm | ||
Width 53 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
High Power Density Footprint
High Temperature (175 °C) Operation
Low Inductance (6.7 nH) Design
Implements Conduction-Optimized Third Generation MOSFET Technology
Terminal Layout Simplifies Bus Bar Design
Integrated Temperature Sensing
Dedicated Drain-Kelvin Pin
Silicon Nitride Insulator and Copper Baseplate
Applications
Motor & Traction Drives
UPS
EV Chargers
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