N-Channel MOSFET, 7 A, 3-Pin DPAK STMicroelectronics STD8N65M5

RS Stock No.:: 188-8291
Mfr. Part No.:: STD8N65M5
Brand:: STMicroelectronics

N-Channel MOSFET, 7 A, 3-Pin DPAK STMicroelectronics STD8N65M5

This image is representative of the product range

On back order for despatch 23/07/2025, delivery within 10 working days from despatch date.

Price (ex. GST) Each (On a Reel of 2500)

$2.218

(exc. GST)

$2.44

(inc. GST)

Units	Per unit	Per Reel*
2500 - 10000	$2.218	$5,545.00
12500 +	$2.144	$5,360.00

*price indicative

RS Stock No.:: 188-8291
Mfr. Part No.:: STD8N65M5
Brand:: STMicroelectronics

Technical data sheets

Datasheet STD8N65M5

Legislation and Compliance

Product Details

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Worldwide best RDS(on) area
Higher VDSSrating
High dv/dt capability
Excellent switching performance
Easy to drive
Applications
Switching applications

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, STMicroelectronics

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	7 A
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	600 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	4V
Maximum Power Dissipation	70 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±25 V
Width	6.2mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	15 nC @ 10 V
Number of Elements per Chip	1
Length	6.6mm
Minimum Operating Temperature	-55 °C
Height	2.17mm
Forward Diode Voltage	1.5V