N-Channel MOSFET, 533 A, 40 V, 8-Pin DFNW8 onsemi NVMTS0D6N04CTXG
- RS Stock No.:
- 186-1425
- Mfr. Part No.:
- NVMTS0D6N04CTXG
- Brand:
- onsemi
Stock check temporarily unavailable - call for stock availability
Added
Price (ex. GST) Each (In a Pack of 5)
$12.92
(exc. GST)
$14.21
(inc. GST)
| Units | Per unit | Per Pack* |
| 5 - 745 | $12.92 | $64.60 |
| 750 - 1495 | $12.60 | $63.00 |
| 1500 + | $12.41 | $62.05 |
| *price indicative | ||
- RS Stock No.:
- 186-1425
- Mfr. Part No.:
- NVMTS0D6N04CTXG
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Non Compliant
Product Details
Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (8x8 mm)
Low RDS(on)
Low QG and Capacitance
Wettable Flank Option
PPAP Capable
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
End Products
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
Low RDS(on)
Low QG and Capacitance
Wettable Flank Option
PPAP Capable
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
End Products
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 533 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | DFNW8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 480 μΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 245 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 187 nC @ 10 V |
| Length | 8.1mm |
| Maximum Operating Temperature | +175 °C |
| Width | 8mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
| Height | 1.15mm |
| Automotive Standard | AEC-Q101 |