N-Channel MOSFET, 235 A, 40 V, 8-Pin LFPAK8 onsemi NVMJS1D3N04CTWG
- RS Stock No.:
- 185-9186
- Mfr. Part No.:
- NVMJS1D3N04CTWG
- Brand:
- onsemi
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Price (ex. GST) Each (In a Pack of 4)
$3.24
(exc. GST)
$3.56
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 748 | $3.24 | $12.96 |
| 752 - 1496 | $3.163 | $12.652 |
| 1500 + | $3.118 | $12.472 |
*price indicative
- RS Stock No.:
- 185-9186
- Mfr. Part No.:
- NVMJS1D3N04CTWG
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Non Compliant
- COO (Country of Origin):
- PH
Product Details
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 235 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | LFPAK8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 1.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 128 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V |
| Width | 4.9mm |
| Length | 5mm |
| Minimum Operating Temperature | -55 °C |
| Height | 1.2mm |
| Automotive Standard | AEC-Q101 |
| Forward Diode Voltage | 1.2V |
Related links
- N-Channel MOSFET, 235 A, 40 V, 8-Pin LFPAK8 onsemi NVMJS1D3N04CTWG
- N-Channel MOSFET, 330 A, 40 V, 8-Pin LFPAK8 onsemi NTMJS0D9N04CLTWG
- N-Channel MOSFET, 258 A, 40 V, 8-Pin LFPAK8 onsemi NTMYS1D2N04CLTWG
- N-Channel MOSFET, 200 A, 40 V, 8-Pin LFPAK8 onsemi NTMJS1D5N04CLTWG
- N-Channel MOSFET, 300 A, 40 V, 8-Pin LFPAK8 onsemi NTMJS1D0N04CTWG
- N-Channel MOSFET, 200 A, 40 V, 8-Pin LFPAK8 onsemi NVMJS1D5N04CLTWG
- N-Channel MOSFET, 164 A, 60 V, 8-Pin LFPAK8 onsemi NVMJS2D5N06CLTWG
- N-Channel MOSFET, 250 A, 60 V, 8-Pin LFPAK8 onsemi NTMJS1D6N06CLTWG