Vishay Single 1 Type N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin IRFBE30LPBF

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Subtotal (1 pack of 5 units)*

$27.83

(exc. GST)

$30.615

(inc. GST)

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Units
Per unit
Per Pack*
5 - 10$5.566$27.83
15 - 20$5.434$27.17
25 +$5.344$26.72

*price indicative

Packaging Options:
RS Stock No.:
180-8664
Mfr. Part No.:
IRFBE30LPBF
Brand:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.1A

Maximum Drain Source Voltage Vds

800V

Pin Count

3

Maximum Drain Source Resistance Rds

3Ω

Maximum Power Dissipation Pd

125W

Forward Voltage Vf

1.8V

Typical Gate Charge Qg @ Vgs

78nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay IRFBE30L is a N-channel power MOSFET having drain to source(Vds) voltage of 800V.The gate to source voltage(VGS) is 20V. It is having I2PAK (TO-262) and D2PAK (TO-263) package. It offers drain to source resistance (RDS.) 3ohms at 10VGS. Maximum drain current 4.1 A.

Dynamic dV/dt rating

Repetitive avalanche rated

Fast switching

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