- RS Stock No.:
- 180-7943
- Mfr. Part No.:
- SQ2308CES-T1_GE3
- Brand:
- Vishay
32920 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Pack of 20)
$0.818
(exc. GST)
$0.90
(inc. GST)
Units | Per unit | Per Pack* |
---|---|---|
20 - 740 | $0.818 | $16.36 |
760 - 1480 | $0.797 | $15.94 |
1500 + | $0.784 | $15.68 |
*price indicative
- RS Stock No.:
- 180-7943
- Mfr. Part No.:
- SQ2308CES-T1_GE3
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 150mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 2W and continuous drain current of 2.3A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
• Typical ESD performance 1500V
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
• Typical ESD performance 1500V
Applications
• Adaptor switch
• DC/DC converter
• Load switch
• DC/DC converter
• Load switch
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 2.3 A |
Maximum Drain Source Voltage | 60 V |
Series | TrenchFET |
Package Type | SOT-23 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 0.164 O |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Number of Elements per Chip | 1 |
Related links
- N-Channel MOSFET, 2.3 A, 60 V, 3-Pin SOT-23 Vishay SQ2308CES-T1_GE3
- P-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Vishay SI2301CDS-T1-GE3
- N-Channel MOSFET, 4.3 A, 60 V, 3-Pin SOT-23 Vishay SQ2362ES-T1_GE3
- N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 Vishay Siliconix SQ2364EES-T1_GE3
- P-Channel MOSFET, 2.8 A, 60 V, 3-Pin SOT-23 Vishay SQ2361ES-T1_GE3
- P-Channel MOSFET, 1.7 A, 60 V, 3-Pin SOT-23 Vishay SQ2309ES-T1_GE3
- N-Channel MOSFET, 8 A, 40 V, 3-Pin SOT-23 Vishay SQ2318BES-T1_GE3
- N-Channel MOSFET, 8 A, 40 V, 3-Pin SOT-23 Vishay SQ2318AES-T1_GE3