Vishay TrenchFET Type P-Channel MOSFET, 16 A, 12 V Enhancement, 6-Pin MICRO FOOT SI8483DB-T2-E1

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$18.025

(exc. GST)

$19.825

(inc. GST)

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Units
Per unit
Per Pack*
25 - 725$0.721$18.03
750 - 1475$0.703$17.58
1500 +$0.694$17.35

*price indicative

Packaging Options:
RS Stock No.:
180-7932
Mfr. Part No.:
SI8483DB-T2-E1
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

12V

Series

TrenchFET

Package Type

MICRO FOOT

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

26mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

13W

Maximum Gate Source Voltage Vgs

10 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

21nC

Maximum Operating Temperature

150°C

Width

1 mm

Height

0.59mm

Standards/Approvals

No

Length

1.5mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay Siliconix Si8483DB series TrenchFET dual N channel power MOSFET has drain to source voltage of 12 V. It is maximum power dissipation of 13 W and mainly used in load switch in portable devices.

Low voltage drop

Low power consumption

Increased battery life

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