Vishay Dual SIA931DJ Type P-Channel MOSFET, -4.5 A, -30 V Enhancement, 6-Pin PowerPack SIA931DJ-T1-GE3

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Subtotal (1 pack of 20 units)*

$16.68

(exc. GST)

$18.34

(inc. GST)

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  • 3,000 unit(s) shipping from 04 December 2026
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Units
Per unit
Per Pack*
20 - 740$0.834$16.68
760 - 1480$0.813$16.26
1500 +$0.80$16.00

*price indicative

Packaging Options:
RS Stock No.:
180-7884
Mfr. Part No.:
SIA931DJ-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-4.5A

Maximum Drain Source Voltage Vds

-30V

Package Type

PowerPack

Series

SIA931DJ

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.1Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4.1nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

5W

Forward Voltage Vf

-1.2V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Length

2.15mm

Height

0.8mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay SIA931DJ is a dual P-channel MOSFET having drain to source(Vds) voltage of -30V.The gate to source voltage(VGS) is 20V. It is having Power PAK SC-70 package. It offers drain to source resistance (RDS.) 0.065ohms at 10VGS and 0.08ohms at 6VGS. Maximum drain current -4.5A.

Trench FET Gen III power MOSFET

Thermally enhanced Power PAK SC-70 package small footprint area low on resistance

100 % Rg tested

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