P-Channel MOSFET, 14.9 A, 30 V, 8-Pin SO-8 Vishay SI4825DDY-T1-GE3

RS Stock No.:: 180-7295
Mfr. Part No.:: SI4825DDY-T1-GE3
Brand:: Vishay

P-Channel MOSFET, 14.9 A, 30 V, 8-Pin SO-8 Vishay SI4825DDY-T1-GE3

2340 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 2500)

$0.636

(exc. GST)

$0.70

(inc. GST)

Units	Per unit	Per Reel*
2500 - 2500	$0.636	$1,590.00
5000 - 7500	$0.626	$1,565.00
10000 +	$0.611	$1,527.50

*price indicative

RS Stock No.:: 180-7295
Mfr. Part No.:: SI4825DDY-T1-GE3
Brand:: Vishay

Technical data sheets

Datasheet

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 25V. It has drain-source resistance of 12.5mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 5W and continuous drain current of 14.9A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications

• Load Switch
• Notebook Adaptor Switch

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	14.9 A
Maximum Drain Source Voltage	30 V
Series	TrenchFET
Package Type	SO-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	0.0205 O
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Number of Elements per Chip	1