- RS Stock No.:
- 178-4662
- Mfr. Part No.:
- FCP125N65S3R0
- Brand:
- onsemi
On back order for despatch 30/10/2024, delivery within 10 working days from despatch date.
Price (ex. GST) Each (In a Pack of 5)
$7.246
(exc. GST)
$7.971
(inc. GST)
Units | Per unit | Per Pack* |
---|---|---|
5 - 10 | $7.246 | $36.23 |
15 - 20 | $7.062 | $35.31 |
25 + | $6.954 | $34.77 |
*price indicative
Alternative
This product is not currently available. Here is our alternative recommendation.
- RS Stock No.:
- 178-4662
- Mfr. Part No.:
- FCP125N65S3R0
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
SUPERFET III MOSFET is ON Semiconductors brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
700 V @ TJ = 150 °C
Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)
Ultra Low Gate Charge (Typ. Qg = 46 nC)
Optimized Capacitance
Typ. RDS(on) = 105 mΩ
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Consummer
Industrial
End Products:
Notebook / Desktop computer / Game console
Telecom / Server
LCD / LED TV
LED Lighting / Ballast
Adapter
Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)
Ultra Low Gate Charge (Typ. Qg = 46 nC)
Optimized Capacitance
Typ. RDS(on) = 105 mΩ
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Consummer
Industrial
End Products:
Notebook / Desktop computer / Game console
Telecom / Server
LCD / LED TV
LED Lighting / Ballast
Adapter
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 24 A |
Maximum Drain Source Voltage | 650 V |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 125 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4.5V |
Minimum Gate Threshold Voltage | 2.5V |
Maximum Power Dissipation | 181 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Width | 4.7mm |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 46 nC @ 10 V |
Length | 10.67mm |
Maximum Operating Temperature | +150 °C |
Height | 16.3mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.2V |
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